Light-emitting diode and its manufacturing method
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United States of America Patent
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May 12, 2009
Grant Date -
Feb 23, 2006
app pub date -
Oct 24, 2005
filing date -
May 27, 2003
priority date (Note) -
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Abstract
It is an object of the present invention to provides the light emitting diode having a light emitting part of an AlGaInP type, and having a current diffusion layer which includes In on a light emitting side of the light emitting part, so that the generation of hillocks is effectively inhibited and the brightness of the light emitting diode is increased.
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