Semiconductor device and method for manufacturing the same
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United States of America Patent
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May 5, 2009
Grant Date -
Jul 24, 2008
app pub date -
Mar 3, 2008
filing date -
Dec 26, 2005
priority date (Note) -
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Abstract
Embodiments relate to a semiconductor device and a method for manufacturing a semiconductor device that may be capable of improving a step coverage of main chip and scribe lane regions during a formation of an interlayer dielectric are provided. In embodiments, the semiconductor device may include metal layers formed on a substrate including a main chip region and a scribe lane region, respectively, an interlayer dielectric formed on the substrate including the metal layers, a step coverage improving layer formed on an interlayer dielectric of the scribe lane region, a via hole inside the step coverage improving layer and the interlayer dielectric, and a via plug formed by filling the via hole with a metal.
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