Production process for a semiconductor component with a praseodymium oxide dielectric
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United States of America Patent
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May 5, 2009
Grant Date -
Jun 21, 2007
app pub date -
Aug 20, 2004
filing date -
Aug 28, 2003
priority date (Note) -
Expired
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Abstract
The invention concerns a semiconductor component and an associated production process having a silicon-bearing layer, a praseodymium oxide layer and a mixed oxide layer arranged between the silicon-bearing layer and the praseodymium oxide layer and containing silicon, praseodymium and oxygen. It is possible because of the mixed oxide layer on the one hand to improve the capacitance of the component and on the other hand to achieve a high level of charge carrier mobility without the necessity for a silicon oxide intermediate layer.
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