Ferromagnetic material
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United States of America Patent
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May 5, 2009
Grant Date -
Jul 6, 2006
app pub date -
Feb 6, 2004
filing date -
Feb 6, 2003
priority date (Note) -
Expired
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Abstract
A method is provided for producing a doped dilute ferromagnetic semiconductor material, by doping Zinc Oxide in bulk form with manganese to a maximum level of 5 atomic percent concentration. The material is preferably sintered at a maximum temperature of 650° C. The result of this process is a semiconductor material comprising Mn-doped ZnO with a Mn concentration not exceeding 5 atomic percent, wherein the Mn-doped ZnO is ferromagnetic within at least a part of the temperature range from about 218 Kelvin to about 425 Kelvin.
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