Single crystal silicon carbide and method for producing the same

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United States of America Patent

PATENT NO 7527869
APP PUB NO 20040237879A1
SERIAL NO

10479614

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Abstract

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or less, and the crystal has a terrace of 10 micrometer or more and a multi-molecular layer step as the minimum unit of a three-molecular layer.

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Patent Owner(s)

Patent OwnerAddress
KWANSEI GAKUIN EDUCATIONAL FOUNDATIONNISHINOMIYA-SHI HYOGO 662-8501

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Asaoka, Yasushi Sanda, JP 97 320
Kaneko, Tadaaki Sanda, JP 63 118
Sano, Naokatsu Sanda, JP 8 40

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