Method for erasing and changing data of floating gate flash memory
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United States of America Patent
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Apr 28, 2009
Grant Date -
Dec 11, 2008
app pub date -
Jul 20, 2007
filing date -
Jun 11, 2007
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Abstract
A method for erasing data stored in the memory cells of the floating gate flash memory is included. The method allows a plurality of sectors to be disposed in a same P well. The method includes erasing data stored in a first set of memory cells according to a control signal, randomly reading the data stored in a second set of memory cells affected by the erasing action of the first set of memory cells, and writing data read from the second set of memory cells onto the second set of memory cells.
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