CMOS sensor with electrodes across photodetectors at approximately equal potential
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United States of America Patent
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Apr 28, 2009
Grant Date -
Jul 3, 2008
app pub date -
Feb 22, 2008
filing date -
Aug 27, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A MOS or CMOS based active pixel sensor designed for operation with zero or close to zero potential across the pixel photodiodes to minimize or eliminate dark current. In preferred embodiments the pixel photodiodes are produced with a continuous pin or nip photodiode layer laid down over pixel electrodes of the sensor. In this preferred embodiment, the voltage potential across the pixel photodiode structures is maintained constant and close to zero, preferably less than 1.0 volts. This preferred embodiment enables the photodiode to be operated at a constant bias condition during the charge detection cycle. Setting this constant bias condition close to zero (near “short circuit” condition) assures that dark current is substantially zero.
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