Active matrix display devices and the manufacture thereof
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United States of America Patent
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Apr 28, 2009
Grant Date -
Mar 16, 2006
app pub date -
May 15, 2003
filing date -
May 22, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An active plate (2) for an active matrix display device (16), the active plate (2) comprising a substrate (4), a pixel area (6) and an adjacent drive circuit area (8). Both areas include polycrystalline silicon material formed by a process in which a metal is used to enhance the crystallization process (MIC poly-Si), but only the MIC poly-Si in the drive circuit area (8) is subjected to an irradiation process using an energy beam (10). TFTs are fabricated with MIC poly-Si which have leakage currents in the off state sufficiently low for them to be acceptable for use as switching elements in the pixel area of matrix display devices. As only the drive circuit area (8) need be irradiated to provide poly-Si having the desired mobility, the time taken by the irradiation process can be significantly reduced.
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