Process for depositing thin layers on a substrate in a process chamber of adjustable height
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United States of America Patent
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Apr 28, 2009
Grant Date -
May 19, 2005
app pub date -
Oct 18, 2004
filing date -
Apr 22, 2002
priority date (Note) -
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Abstract
A process for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of the process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of the chamber consisting of a gas inlet element. The cover extends parallel to the bottom and forms, together with its gas outlets arranged in a sieve-type manner, a gas exit surface which extends over the entire substrate bearing surface of the substrate holder, the process gas being introduced into the process chamber through the gas exit surface. The process includes the step of varying the height of the process chamber, which is defined by the distance between the substrate bearing surface and the gas exit surface, before the beginning of the deposition process and/or during the deposition process.
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