Method for fabricating polarization reversal structure and reversal structure

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United States of America Patent

PATENT NO 7522791
APP PUB NO 20070258131A1
SERIAL NO

11713238

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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When a domain inversion part is produced by means of electric field polling process, damage in the vicinity of the forward end of a comb electrode and deviation of width of each domain inversion part are to be reduced. A polarization domain inversion structure has polarization domain inversion parts is produced by electric field poling process using a comb electrode formed on one surface of a substrate of a ferroelectric single crystal and of a single domain, and the comb electrode has a plurality of electrode portions and feeding portion. Each of the electrode portions corresponds with each domain inversion part of the domain inversion structure. The electrode portion has a plurality of low resistance pieces arranged in a direction “F” intersecting the longitudinal direction “E” of the electrode portion and spaced apart with each other.

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Patent Owner(s)

Patent OwnerAddress
NGK INSULATORS LTD2-56 SUDA-CHO MIZUHO-KU NAGOYA-CITY AICHI 4678530 ?4678530
NGK OPTOCERAMICS CO LTD434-3 AZA-GOTANDA OOAZA-SHIMOZUE KOMAKI AICHI-PREFECTURE 485-8557

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iwata, Yuichi Nagoya, JP 42 189
Suzuki, Kengo Nagoya, JP 93 530
Yamaguchi, Shoichiro Ichinomiya, JP 54 412

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