Semiconductor device having GaN-based semiconductor layer
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United States of America Patent
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Apr 21, 2009
Grant Date -
Sep 28, 2006
app pub date -
Mar 22, 2006
filing date -
Mar 22, 2005
priority date (Note) -
Expired
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Abstract
A semiconductor device includes, an AlGaN electron supply layer having a [000-1] crystalline orientation in a thickness direction to a substrate plane, a GaN electron traveling layer formed on the AlGaN electron supply layer, a gate electrode formed above the GaN electron traveling layer, and a source electrode and a drain electrode between which the gate electrode is located, the source and drain electrode being formed on the GaN electron traveling layer.
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