Memory cell and method for forming the same
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United States of America Patent
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Apr 14, 2009
Grant Date -
May 1, 2008
app pub date -
Jan 2, 2008
filing date -
Jun 21, 2002
priority date (Note) -
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Abstract
dimensions and method for forming the same. The memory cell is formed on a surface of a substrate and includes an active region formed in the substrate, a semiconductor post formed on the surface of the substrate over the active region and a capacitor is formed on the semiconductor post. A vertical access transistor having a gate structure formed on the semiconductor post is configured to electrically couple the respective memory cell capacitor to the active region when accessed.
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