Phase change memory cell with limited switchable volume
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United States of America Patent
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Apr 7, 2009
Grant Date -
Oct 25, 2007
app pub date -
Apr 25, 2006
filing date -
Apr 25, 2006
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A memory cell comprises a dielectric layer and a phase change material. The dielectric layer defines a trench having both a wide portion and a narrow portion. The narrow portion is substantially narrower than the wide portion. The phase change material, in turn, at least partially fills the wide and narrow portions of the trench. What is more, the phase change material within the narrow portion of the trench defines a void. Data can be stored in the memory cell by heating the phase change material by applying a pulse of switching current to the memory cell. Advantageously, embodiments of the invention provide high switching current density and heating efficiency so that the magnitude of the switching current pulse can be reduced.
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