Method of manufacturing a SONOS memory
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United States of America Patent
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Apr 7, 2009
Grant Date -
Jun 28, 2007
app pub date -
Mar 2, 2007
filing date -
Apr 13, 2004
priority date (Note) -
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Abstract
A method of manufacturing a silicon-oxide-nitride-oxide-silicon (SONOS) memory is provided herein. In the method, a bottom silicon oxide layer is formed over a substrate. A patterned mask layer having a trench therein is formed over the bottom silicon oxide layer. A charge-trapping layer is formed over the substrate covering the surface of the trench. The charge-trapping layer is etched back to form a pair of charge storage spacers on the sidewalls of the trench. After removing the mask layer, a top silicon oxide layer is formed over the substrate covering the charge storage spacers and the bottom silicon oxide layer. A gate corresponding to the pair of charge storage spacers is formed on the top silicon oxide layer. A source/drain region is formed in the substrate on each side of the gate.
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