Method of forming a cavity by two-step etching and method of reducing dimension of a MEMS device
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United States of America Patent
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Apr 7, 2009
Grant Date -
Apr 5, 2007
app pub date -
Mar 15, 2006
filing date -
Oct 3, 2005
priority date (Note) -
Expired
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Abstract
A method for reducing dimension of an MEMS device. A single crystalline substrate having a diaphragm is provided. A first-step anisotropic dry etching process is performed to form an opening corresponding to the diaphragm in the back surface, the anisotropic dry etching stopping on a specific lattice plane extending from the edge of the diaphragm. A second-step anisotropic wet etching process is performed to etch the single crystalline substrate along the specific lattice plane until the diaphragm is exposed to form a cavity having a diamond-like shape.
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