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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
ASSET INTEGRITY MANAGEMENT SOLUTIONS L L C D/B/A AIMS INTERNATIONAL	1617 PEACH LEAF STREET HOUSTON TX 77039

International Classification(s)

• F15D:FLUID DYNAMICS, i.e. METHODS OR MEANS FOR INFLUENC....

• 2007 Application Filing Year
• F15D Class
• 48 Applications Filed
• 18 Patents Issued To-Date
• 37.50 % Issued To-Date

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Leverette, Steven J	Richmond, US	12	102
# of filed Patents : 12 Total Citations : 102
Masters, Randy W	Houston, US	10	135
# of filed Patents : 10 Total Citations : 135
Masters, Rodney H	Houston, US	31	405
# of filed Patents : 31 Total Citations : 405
Schaudt, Kenneth J	Katy, US	3	25
# of filed Patents : 3 Total Citations : 25
Sykes, Michael	Spring, US	23	328
# of filed Patents : 23 Total Citations : 328

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Patent Citation Ranking

• 12 Citation Count
• F15D Class

• 83.33 % this patent is cited more than
• 16 Age

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
April 07, 2009	US,7513209,B2   US7513209B2	GRANTED PATENT AS SECOND PUBLICATION
February 14, 2008	US,20080035351,A1   US20080035351A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent No: 8338315

Processes for curing silicon based low-k dielectric materials

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Abstract

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Processes for curing silicon based low k dielectric materials generally includes exposing the silicon based low k dielectric material to ultraviolet radiation in an inert atmosphere having an oxidant in an amount of about 10 to about 500 parts per million for a period of time and intensity effective to cure the silicon based low k dielectric material so to change a selected one of chemical, physical, mechanical, and electrical properties and combinations thereof relative to the silicon based low k dielectric material prior to the ultraviolet radiation exposure. Also disclosed herein are silicon base low k dielectric materials substantially free of sub-oxidized SiO species.

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Description

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Claims

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Legal Events

 

• STCH2017
• FP2016
• LAPS2016
• REMI2016
• I2012
• FEPP2011
• P2009
• AS�2008
• F2008
• AS2008

Date	Code	Event	Description
Jan 23, 2017	STCH	INFORMATION ON STATUS: PATENT DISCONTINUATION	free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362
Dec 25, 2016	FP	LAPSED DUE TO FAILURE TO PAY MAINTENANCE FEE	Effective Date: Dec 25, 2016
Dec 25, 2016	LAPS	LAPSE FOR FAILURE TO PAY MAINTENANCE FEES
Aug 05, 2016	REMI	MAINTENANCE FEE REMINDER MAILED
Dec 25, 2012	I	Issuance
Nov 02, 2011	FEPP	FEE PAYMENT PROCEDURE	free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY
Aug 27, 2009	P	Published
Apr 23, 2008	AS�	SECURITY INTEREST	free format text: SECURITY AGREEMENT;ASSIGNOR:AXCELIS TECHNOLOGIES, INC.;REEL/FRAME:020986/0143 Owner name: SILICON VALLEY BANK,CALIFORNIA Effective Date: Apr 23, 2008 free format text: SECURITY AGREEMENT;ASSIGNOR:AXCELIS TECHNOLOGIES, INC.;REEL/FRAME:020986/0143 Owner name: SILICON VALLEY BANK, CALIFORNIA Effective Date: Apr 23, 2008
Feb 26, 2008	F	Filing
Feb 26, 2008	AS	ASSIGNMENT	free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MOORE, DARREN L.;WALDFRIED, CARLO;RAJAGOPALAN, GANESH;REEL/FRAME:020560/0530;SIGNING DATES FROM 20080208 TO 20080222 Owner name: AXCELIS TECHNOLOGIES, INC., MASSACHUSETTS free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MOORE, DARREN L.;WALDFRIED, CARLO;RAJAGOPALAN, GANESH;SIGNING DATES FROM 20080208 TO 20080222;REEL/FRAME:020560/0530 Owner name: AXCELIS TECHNOLOGIES, INC., MASSACHUSETTS