Resistive memory element with shortened erase time
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 31, 2009
Issued Date -
N/A
app pub date -
Feb 3, 2006
filing date -
Feb 9, 2005
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A resistive memory element for reversibly switching between a high-resistance OFF state and a low-resistance ON state includes a reactive electrode, an inert electrode and a solid electrolyte arranged between the two electrodes. The resistive memory element further includes a nanomask structure arranged in the solid electrolyte, in particular at the inert electrode, where the nanomask structure is provided with openings through which the solid electrolyte makes contact with the inert electrode.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully