Method for forming a pattern on a semiconductor device and semiconductor device resulting from the same
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United States of America Patent
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Mar 31, 2009
Grant Date -
Jan 24, 2008
app pub date -
Jun 28, 2007
filing date -
Oct 15, 2003
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Abstract
Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by a variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor devices, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising a light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.
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