Method of manufacturing a semiconductor device having damascene structures with air gaps
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United States of America Patent
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Mar 31, 2009
Grant Date -
Sep 29, 2005
app pub date -
Mar 16, 2005
filing date -
Mar 17, 2004
priority date (Note) -
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Abstract
A method of manufacturing a semiconductor device having damascene structures with air gaps is provided. In one embodiment, the method comprises the steps of depositing and patterning a disposable layer, depositing a first barrier layer on top of the patterned disposable layer, depositing a metal layer, planarizing the metal layer, depositing a second barrier layer, planarizing the second barrier layer until substantially no barrier layer material is present on top of the disposable layer, depositing a permeable layer, removing the disposable layer through the permeable layer to form air gaps.
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