Light emitting diode structure and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7510892
APP PUB NO 20080197370A1
SERIAL NO

11737133

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Abstract

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A light emitting diode structure has a silicon substrate, a conductive layer, and a light emitting diode. The top surface of the silicon substrate has a cup-structure like paraboloid, and the bottom of the cup-structure has a plurality of through-holes penetrating the silicon substrate. The conductive layer fills up the through-holes and protrudes out from the through-holes. The light emitting diode is disposed on the top of the conductive layer protruding out from the through-holes and is located at the focus of the cup-structure.

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Patent Owner(s)

Patent OwnerAddress
WALSIN LIHWA CORPORATIONNO 566-3 GAOSHI RD YANGMEI CITY TAOYUAN COUNTY 326

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Hong-Da Tai-Chung Hsien, TW 30 380
Lin, Hung-Yi Tao-yuan Hsien , TW 167 1166

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