Magnetic tunnel junction temperature sensors and methods
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United States of America Patent
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Mar 31, 2009
Grant Date -
Apr 5, 2007
app pub date -
Sep 30, 2005
filing date -
Sep 30, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Techniques of sensing a temperature of a heat source disposed in a substrate of an integrated circuit are provided. According to one exemplary method, a Magnetic Tunnel Junction (“MTJ”) temperature sensor is provided over the heat source. The MTJ temperature sensor comprises an MTJ core configured to output a current during operation thereof. The value of the current varies based on a resistance value of the particular MTJ core. The resistance value of the MTJ core varies as a function of the temperature of the heat source. A value of the current of the MTJ core can then be associated with a corresponding temperature of the heat source.
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