Single-atom tip and preparation method thereof

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United States of America Patent

PATENT NO 7507320
APP PUB NO 20060075626A1
SERIAL NO

10985717

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Abstract

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This invention discloses an electrochemical method for the preparation of single atom tips to replace the traditional vacuum evaporation method. The invented method for preparation of single atom tips includes the following steps: A substrate single crystal metal wire etched electrochemically to form a tip. The surface of the metal tip is cleaned. A small quantity of noble metal is plated on the apex of the tip in low concentration noble metal electrolyte. Annealing in vacuum or in inert gas ambient to diffuse the additional electroplated noble metal atoms and thus a single atom tip is formed on the surface of the substrate. The present invention also discloses the single atom tip so prepared. The single atom tip of this invention has only a very small number of atoms, usually only one atom, at its apex.

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Patent Owner(s)

Patent OwnerAddress
ACADEMIA SINICA128 ACADEMIA ROAD SECTION 2 NANKANG TAIPEI 115

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fu, Tsu-Yi Taipei, TW 2 41
Hwang, Ing-Shouh Taipei, TW 15 86
Kuo, Hong-Shi Taipei, TW 2 41
Tsong, Tien T Taipei, TW 2 41

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