Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET
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United States of America Patent
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Mar 17, 2009
Grant Date -
Dec 21, 2006
app pub date -
May 11, 2006
filing date -
May 11, 2005
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Expired
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Abstract
Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting nickel-ytterbium-silicon gate electrode has a work function of about 4.22 eV.
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