Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device
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United States of America Patent
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Mar 10, 2009
Grant Date -
Mar 16, 2006
app pub date -
Jun 4, 2003
filing date -
Jun 13, 2002
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Abstract
A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer, and a p-type contact layer) primarily including ZnO are formed sequentially by an ECR sputtering method or other suitable method on a zinc-polar surface of a ZnO substrate. A transparent electrode and a p-side electrode are formed by an evaporation method or other suitable method on a surface of the p-type contact layer, and an n-side electrode is formed on an oxygen-polar surface of the ZnO substrate.
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