Method for fabricating GaN-based nitride layer

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Mar 3, 2009
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Jul 13, 2006
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Aug 21, 2004
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Nov 28, 2003

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Abstract

The present invention relates to a method for fabricating a gallium nitride(GaN) based nitride layer including a step of forming a silicon carbide buffer layer on a substrate, a step of forming a wetting layer having a composition of In(x1)Ga(y1)N (0

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SAMSUNG ELECTRONICS CO LTD	129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 REPUBLIC OF KOREA

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Jang, Moon Sik	Kwanju-si , KR	1	4
Jeon, Soo Kun	Gunsan-si , KR	42	365

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Method for fabricating GaN-based nitride layer

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United States of America Patent

10543318

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PATENT NO	7498244
APP PUB NO	20060154454A1
SERIAL NO	10543318
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
March 03, 2009	US,7498244,B2 US7498244B2	GRANTED PATENT AS SECOND PUBLICATION
July 13, 2006	US,20060154454,A1 US20060154454A1	FIRST PUBLISHED PATENT APPLICATION

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10543318

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