Semiconductor light-emitting device and manufacturing method therefor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 24, 2009
Grant Date -
Sep 13, 2001
app pub date -
Feb 7, 2001
filing date -
Feb 7, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
On a GaAs substrate (1), are formed a DBR (Distributed Bragg Reflector) (3), and a light-emitting layer (5) made of a plurality of layers of Al.sub.yGa.sub.zIn.sub.1-y-zP (0.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1) above the DBR (3). A semiconductor layer or a plurality of semiconductor layers (6)-(10) having a number of layers of 1 or more are formed on the light-emitting layer (5), and a grating pattern for scattering light is formed on a surface of the semiconductor layer (9) by photolithography and by etching with a sulfuric acid/hydrogen peroxide based etchant. Thus, a semiconductor device small in radiation angle dependence of light emission wavelength, as well as a manufacturing method therefor, are provided.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully