Method for forming fine pattern of semiconductor device
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United States of America Patent
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Feb 24, 2009
Grant Date -
Mar 13, 2008
app pub date -
Feb 26, 2007
filing date -
Sep 12, 2006
priority date (Note) -
Expired
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Abstract
A method for forming a fine pattern of a semiconductor device includes forming a first photoresist film pattern over a semiconductor substrate including an underlying layer, exposing the first photoresist film pattern to generate an acid from the first photoresist film pattern, bleaching the first photoresist film pattern, and forming a second photoresist film pattern between the first photoresist patterns.
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