Photodetector comprising a monolithically integrated transimpedance amplifier and evaluation electronics, and production method
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United States of America Patent
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Feb 17, 2009
Grant Date -
Jul 19, 2007
app pub date -
Dec 6, 2004
filing date -
Dec 6, 2003
priority date (Note) -
Expired
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Abstract
The aim of the invention is to configure a photodetector (10) such that no disadvantages are created for processing low luminous intensities on detectors known in prior art, especially when monolithically integrating the evaluation electronics. Said aim is achieved by a photodetector for processing low luminous intensities, comprising a monolithically integrated transimpedance amplifier and monolithically integrated evaluation electronics. An actual photocell component (20) is assigned to the chip face onto which the light preferably falls. Electronic circuit components (30) are arranged on the opposite chip face. Electrical connections (40) between the photocell and the electronic circuit are provided with an extension in the direction running perpendicular to the chip normal.
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