Method for fabricating an image sensor mounted by mass reflow
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United States of America Patent
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Feb 17, 2009
Grant Date -
Apr 19, 2007
app pub date -
Sep 30, 2004
filing date -
Oct 1, 2003
priority date (Note) -
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status (Latency Note)
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Abstract
A package for semiconductor image pickup device is provided. The package is fabricated by using flip chip bumping. During deposition process of forming a metallic bonding layer and a metal layer for plating, a surface of a semiconductor image pickup device is maintained at the range between room temperature and 200° C. in accordance with a first embodiment. A polymer layer for preventing stress from generating can absorb stress generated during the deposition process in accordance with a second embodiment. According to the present invention, a functional polymer layer on the surface of a semiconductor image pickup device can be prevent from being deteriorated in its properties and from transforming at its surface.
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