Method to make markers for double gate SOI processing
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United States of America Patent
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Feb 10, 2009
Grant Date -
Sep 29, 2005
app pub date -
Mar 16, 2005
filing date -
Mar 17, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of making at least one marker (MX) for double gate SOI processing on a SOI wafer is disclosed. The marker has a diffracting structure in a first direction and the diffracting structure is configured to generate an asymmetrical diffraction pattern during use in an alignment and overlay detection system for detection in the first direction.
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