Semiconductor article and method for manufacturing with reduced base resistance
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United States of America Patent
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Feb 10, 2009
Grant Date -
May 11, 2006
app pub date -
Nov 4, 2005
filing date -
Nov 5, 2004
priority date (Note) -
Expired
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Abstract
A method for manufacturing a semiconductor article and a semiconductor article is provided, wherein a base region of a first semiconductor material is applied, a silicide layer is applied above the base region, after the application of the silicide layer, an opening is created in the silicide layer by removing the silicide layer within the area of the opening, and after this, an emitter region is formed within the opening.
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