Voltage non-uniformity compensation method for high frequency plasma reactor for the treatment of rectangular large area substrates
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United States of America Patent
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Feb 10, 2009
Grant Date -
Mar 31, 2005
app pub date -
Sep 8, 2004
filing date -
Sep 10, 2003
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Abstract
A vacuum vessel and at least two electrodes define an internal process space. At least one power supply is connectable with the electrodes. A substrate holder holds a substrate to be treated in the internal process space. At least one of the electrodes has along a first cross section a concave profile and has along a second cross section a convex profile, the first cross section being parallel to the second cross section. Gas is provided to the space through a gas inlet. Power is provided to the electrodes and the substrate is treated.
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