Method of forming metal line stacking structure in semiconductor device
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United States of America Patent
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Feb 3, 2009
Grant Date -
May 17, 2007
app pub date -
Nov 7, 2006
filing date -
Apr 18, 2003
priority date (Note) -
Expired
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Abstract
The method for forming a metal line stacking structure according to a preferred embodiment of the present invention comprises: sequentially forming a first barrier metal and a first metal layer on a lower dielectric layer that is disposed over a semiconductor substrate, and performing a plasma treatment; forming a second barrier metal on the plasma-treated first metal layer; selectively etching the second barrier metal, the first metal layer, and the first barrier metal to form a metal line layer including the second barrier metal, the first metal layer, and the first barrier metal, which respectively have a predetermined width; and sintering the metal line layer to raise a reaction between the first metal layer and the second barrier metal, thereby generating a metal compound layer.
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