Method for fabricating a MESFET

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United States of America Patent

PATENT NO 7485514
APP PUB NO 20070155072A1
SERIAL NO

11327257

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Abstract

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A MESFET and method for fabricating a MESFET are provided. The method includes forming an n-type channel portion in a substrate and forming a p-type channel portion in the substrate. A boundary of the n-type channel portion and a boundary of the p-type channel portion define an intrinsic region in the substrate.

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Patent Owner(s)

Patent OwnerAddress
COBHAM DEFENSE ELECTRONIC SYSTEMS CORPORATION58 MAIN STREET BOLTON MA 01740

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Winslow, Thomas A 2335 Emery Creek 9 73

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