Method for chemical vapor deposition capable of preventing contamination and enhancing film growth rate
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United States of America Patent
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Feb 3, 2009
Grant Date -
Mar 22, 2007
app pub date -
Nov 21, 2006
filing date -
Oct 18, 2001
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Abstract
A method for chemical vapor deposition (CVD) comprises injecting a purge gas into a reaction chamber where substrates are located; and supplying a source material of vapor phase participating directly in forming a film on the substrates to an inside of the reaction chamber, thus forming a protective curtain in the inside of the reaction chamber by a mutual diffusion-suppressing action between the purge gas and source material.
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