Method for improving the thermal characteristics of semiconductor memory cells
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United States of America Patent
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Jan 27, 2009
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Oct 28, 2005
filing date -
Oct 29, 2004
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Abstract
A non-volatile, resistively switching memory cell includes a first electrode, a second electrode and a solid electrolyte, which is arranged such that it makes contact between the electrodes, and is composed of an amorphous or partially amorphous, non-oxidic matrix and a metal which is distributed in the amorphous or partially amorphous, non-oxidic matrix and whose cations migrate to the cathode in the amorphous or partially amorphous, non-oxidic matrix under the influence of an electrical voltage, wherein the solid electrolyte contains one or more further metallic materials for stabilization of the amorphous state of the matrix.
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