Aluminum nitride thin film, composite film containing the same and piezoelectric thin film resonator using the same
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United States of America Patent
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Jan 27, 2009
Grant Date -
Apr 12, 2007
app pub date -
Oct 12, 2006
filing date -
Oct 12, 2005
priority date (Note) -
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Abstract
A piezoelectric thin film resonator has a substrate and a piezoelectric layered structure including a lower electrode, piezoelectric aluminum nitride thin film with c-axis orientation and upper electrode formed on the substrate in this order. The lower electrode are made of a metal thin film including a layer containing ruthenium as a major component having a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of ruthenium of 3.0° or less. The piezoelectric aluminum nitride thin film formed on the lower electrode has a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of 2.0° or less.
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