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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
STMICROELECTRONICS SILICON CARBIDE AB	RAMSHÄLLSVÄGEN 15 NORRKÖPING 602 38

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
• C30B:SINGLE-CRYSTAL GROWTH
• B32B:LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA....

• [Classification Symbol]

• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Ellison, Alexandre	Linköping, SE	10	166
Friedrichs, Peter	Nürnberg, DE	23	480
Magnusson, Bjorn	Linkoping, SE	11	153
Mitlehner, Heinz	Uttenreuth, DE	45	921
Stephani, Dietrich	Bubenreuth, DE	23	593
Vehanen, Asko	Esbo, FI	3	21

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
January 27, 2009	US,7482068,B2   US7482068B2	GRANTED PATENT AS SECOND PUBLICATION
June 29, 2006	US,20060137600,A1   US20060137600A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent No: 7482068

Lightly doped silicon carbide wafer and use thereof in high power devices

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