Multilayered semiconductor structure containing a MISFET, a resistor, a capacitor, and an inductor
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United States of America Patent
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Jan 20, 2009
Grant Date -
Aug 23, 2007
app pub date -
Apr 12, 2007
filing date -
Sep 27, 2002
priority date (Note) -
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Abstract
A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
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