Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing
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United States of America Patent
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Jan 20, 2009
Grant Date -
Nov 3, 2005
app pub date -
May 3, 2004
filing date -
May 2, 2003
priority date (Note) -
Expired
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Abstract
A novel cleaning composition used for post-etch resist residue removal is disclosed. In contrast to the conventional cleaning solutions based on fluoride chemistries, the present invention can significantly reduce the oxide loss resulting from the exfoliation, while still providing an excellent cleaning efficiency.
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