Yttria sintered body and manufacturing method therefor
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United States of America Patent
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Jan 13, 2009
Grant Date -
Mar 22, 2007
app pub date -
Aug 15, 2006
filing date -
Aug 16, 2005
priority date (Note) -
Expired
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Abstract
To provide a yttria sintered body having an excellent corrosion resistance to halogen-based corrosive gases and plasma and an excellent thermal shock resistance, and adapted for use as a component member in manufacturing apparatuses for semiconductor and liquid crystal devices, particularly in a plasma process apparatus. A yttria sintered body including tungsten of an average particle size of 3 μm or less dispersed in the yttria so that a ratio of the tungsten relative to the yttria is ranging from 1 to 50% in terms of weight, and having an open pore rate of 0.2% or less and a thermal shock resistance by water submersion method of 200° C. or larger.
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