Method of growing nitrogenous semiconductor crystal materials
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United States of America Patent
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Jan 6, 2009
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N/A
app pub date -
Jul 24, 2000
filing date -
Apr 12, 2000
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Expired
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Abstract
wherein A, B, C is an element of group II or III, N is nitrogen, M represents an element of group V or VI, and X, Y, Z, W denote the molar fraction of each element of this compound, using a, which are deposited on sapphire, SiC or Si, using various ramp functions permitting a continuous variation of the growth parameters during the initial growth.
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