Multi-state magnetoresistance random access cell with improved memory storage density
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United States of America Patent
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Dec 16, 2008
Grant Date -
Jan 26, 2006
app pub date -
Aug 25, 2005
filing date -
Jul 17, 2002
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Abstract
A multi-state magnetoresistive random access memory device having a pinned ferromagnetic region with a magnetic moment vector fixed in a preferred direction in the absence of an applied magnetic field, a non-ferromagnetic spacer layer positioned on the pinned ferromagnetic region, and a free ferromagnetic region with an anisotropy designed to provide a free magnetic moment vector within the free ferromagnetic region with N stable positions, wherein N is a whole number greater than two, positioned on the non-ferromagnetic spacer layer. The number N of stable positions can be induced by a shape anisotropy of the free ferromagnetic region wherein each N stable position has a unique resistance value.
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