Nonvolatile semiconductor storage device
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United States of America Patent
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Dec 9, 2008
Grant Date -
Apr 5, 2007
app pub date -
Nov 29, 2006
filing date -
Jan 12, 2001
priority date (Note) -
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Abstract
A nonvolatile memory device of the present invention performs a programming operation by accumulating a charge in certain capacitance which is provided for each programming memory cell and injecting hot electrons generated when the charge is discharged via the memory cell into a floating gate. Thus, a variation in a programming characteristic of the nonvolatile semiconductor memory device is reduced, thereby realizing high-speed programming operation.
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