Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same

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United States of America Patent

PATENT NO 7459736
APP PUB NO 20060022236A1
SERIAL NO

10978795

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A ferroelectric capacitor comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer. A ferroelectric memory comprises a substrate and a plurality of memory cells arranged on the substrate. Each memory cell comprises a first electrode comprising an alloy of Ir and Ru, a ferroelectric layer disposed on the first electrode, and a second electrode disposed on the ferroelectric layer.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG, ADVANCED INSTITUTE OF TECHNOLOGY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Suk-pil Gyeonggi-do, KR 78 2424
Koo, June-mo Seoul, KR 47 1642
Lee, Jung-hyun Gyeonggi-do, KR 186 6824
Park, Young-soo Gyeonggi-do, KR 220 13735
Shin, Sang-min Gyeonggi-do, KR 49 560

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