Method of fabricating silicon-based MEMS devices
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United States of America Patent
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Dec 2, 2008
Grant Date -
May 25, 2006
app pub date -
Oct 21, 2005
filing date -
Jun 12, 2003
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Abstract
A method of fabricating a silicon-based microstructure is disclosed, which involves depositing electrically conductive amorphous silicon doped with first and second dopants to produce a structure having a residual mechanical stress of less than +/=100 Mpa. The dopants can either be deposited in successive layers to produce a laminated structure with a residual mechanical stress of less than +/=100Mpa or simultaneously to produce a laminated structure having a mechanical stress of less than +/=100Mpa.
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