Compositions for cleaning organic and plasma etched residues for semiconductor devices
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United States of America Patent
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Nov 25, 2008
Grant Date -
Sep 15, 2005
app pub date -
Aug 17, 2004
filing date -
Jul 10, 2000
priority date (Note) -
Expired
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Abstract
A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.
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