Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer
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United States of America Patent
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Nov 18, 2008
Grant Date -
Mar 22, 2007
app pub date -
Sep 1, 2006
filing date -
Sep 6, 2005
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Abstract
A thin-film transistor including a channel layer being formed of an oxide semiconductor transparent to visible light and having a refractive index of nx, a gate-insulating layer disposed on one face of the channel layer, and a transparent layer disposed on the other face of the channel layer and having a refractive index of nt, where there is a relationship of nx>nt. A thin-film transistor including a substrate having a refractive index of no, a transparent layer disposed on the substrate and having a refractive index of nt, and a channel layer disposed on the transparent layer and having a refractive index of nx, where there is a relationship of nx>nt>no.
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