Photomask with photoresist test patterns and pattern inspection method
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United States of America Patent
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Nov 18, 2008
Grant Date -
Apr 28, 2005
app pub date -
Oct 26, 2004
filing date -
Oct 27, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A photomask with photoresist test patterns and pattern inspection method using four test patterns on the photomask to perform the exposure on the first photoresist layer in order to adjust the photomask. The present invention prevents misalignment of the first photomask. The information associated with the misalignment is provided to the process engineer based on the location of the test patterns.
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