Method of determining voltage compensation for flash memory devices

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United States of America Patent

PATENT NO 7440333
APP PUB NO 20060120151A1
SERIAL NO

11340916

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Abstract

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The present invention determines or identifies programming variations for different groups within an array or memory device that properly program memory cells within the respective groups. Then, during programming operations for a given memory cell, programming voltages are applied according to the determined or identified programming variations for the group to which the given memory cell belongs. These adjusted programming variations facilitate successful programming of the particular memory cell.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES LLC198 CHAMPION CT SAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hamilton, Darlene San Jose, CA 34 852
Hsia, Ed Saratoga, CA 4 380
Madhani, Alykhan Santa Clara, CA 5 311
Yu, Kenneth San Francisco, CA 21 426

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